- The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
• Guaranteed Performance at 30 MHz, 50 V:
Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
• Typical Performance at 175 MHz, 50 V:
Output Power — 150 W
Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliabil